**Author details**

Linh Chi T. Cao, Luqman Hakim and Shu-Han Hsu\* Sirindhorn International Institute of Technology, Thammasat University, Pathum Thani, Thailand

\*Address all correspondence to: shuhanhsu@siit.tu.ac.th

© 2022 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

*Boron Doping in Next-Generation Materials for Semiconductor Device DOI: http://dx.doi.org/10.5772/intechopen.106450*
