*Growth of Diamond Thin Film and Creation of NV Centers DOI: http://dx.doi.org/10.5772/intechopen.108159*

native 14N atoms, 15N isotope atoms were used to create NV defect by ion implantation and annealing procedure (**Figure 9**) [47, 48]. It is observed that NV centers formed by implanted 15 N atoms exhibit broadened optical linewidth (>1 GHz) and higher strain than that formed by native 14N atoms (<500 MHz). The poor optical coherence of NV centers formed from implanted nitrogen is not resulted from an intrinsic effect related to the diamond or isotope, but the influence of lattice damage by ion bombardment [47]. Meanwhile, a mass-produced NV color center array with positioning accuracy of tens of nanometers can be achieved by using nitrogen ion implantation [49].
