**Abstract**

Chemical vapor deposition (CVD) represents a viable synthesis route to produce good-quality, large-area graphene films. In simple words, the technique relies on the thermal decomposition of a carbon-rich source and the further deposition of carbon atoms in a honeycomb pattern on top of a metallic catalyst film. Due to the versatility of the method, many alternatives have been explored for the synthesis of this amazing carbon 2D nanomaterial: low pressure, atmospheric pressure, roll-to-roll. Different catalysts have been explored as well; however, copper (Cu) represents the prime choice, being micrometer-thick foils the most commonly used form in CVD experiments. This chapter focuses on the production of graphene *via* the CVD method using copper foils, and it commences by explaining the generalities of the technique and its variants; next, a description of the method for the production of graphene using copper is included as well as the different precursors (gas, liquid, solid) that have been reported for its synthesis; we continue explaining the importance of the other gases involved in the synthesis and the efforts toward production of large-size single crystals; the obliged transfer process is reviewed, and we conclude by analyzing the advantages and the challenges of the technique.

**Keywords:** CVD, graphene, polycrystalline, copper foil, precursor
