**6. Conclusions**

The material and electrical properties of high-performance graphene-HgCdTe detector technology, where the graphene layer functions as a high mobility channel, developed for MWIR sensing and imaging for NASA Earth Science applications have been assessed. Comprehensive modeling of HgCdTe, graphene, and the HgCdTe-graphene interface has aided in the design and development of this MWIR detector technology.

By using a SOD process, we have achieved boron doping of the bilayer graphene. SIMS, XPS, and Raman spectroscopy-based characterization of the doping levels and properties have confirmed higher boron doping concentrations >1020 cm−3 in the graphene layers. The *p*-doped graphene bilayers originally on Si/SiO2 substrates have been furthermore transferred onto HgCdTe substrates, and the structural integrity of the transferred doped layers confirmed through various methods of characterization for implementation as high mobility channels in uncooled MWIR graphene-enhanced HgCdTe detection devices.

Successful integration of enhanced graphene into HgCdTe photodetectors can thereby provide higher MWIR detector performance as compared to HgCdTe detectors alone. Combined with the room temperature operational capability of the graphene-HgCdTe detectors and arrays, the fulfillment of the objective of attaining new earth observation measurement capabilities is a step closer to benefit and advancing critical NASA Earth Science applications.

## **Acknowledgements**

This research is and has been funded by the National Aeronautics and Space Administration (NASA), Contract No. 80NSSC18C0024. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either express or implied, of NASA or the U.S. Government.
