**Physical characteristics - interface connectors**

## **2.3 Wideband front-end design**

**Figure 3** shows a frontend block diagram. The frontend module consists of a limiter and a wideband 18–40 GHz low noise amplifier (LNA) LMA406. The solid state LMA406 is a low noise PHEMT amplifier that operates from 18 to 40 GHz. The amplifier is a two-stage amplifier.

The amplifier gain is around 12 dB with 4.5 dB noise figure and 14 dBm saturated output power, and 1 dB gain compression power output of +10 dBm. The LNA dimensions are 1.44 x 1.1 mm. A wideband PHEMT MMIC SPDT, AMMC-2008, was used. AMMC-2008 is a monolithic PHEMT SPDT switch with low insertion loss and high isolation from DC to 50 GHz. For improved reliability and moisture


protection, the die is passivated at the active areas. One series and two shunt PHEMTs per throw provide 2.0 dB insertion loss and 28 dB isolation at 40 GHz. The isolation between the SPDT input port to the output ports is better than 25 dB. The SPDT 1 dBc compression point is around 14 dBm. The SPDT dimensions are 1 x 0.7 x 0.1 mm. The frontend electrical characteristics was evaluated using ADS Keysight software [15] and SYSCAL software. The MMIC amplifiers and the SPDT are connected to the surface of the mechanical box. The MMIC chips are assembled on a CoVar carrier. During development it was found that the spacing between the frontend carriers should be less than 0.03 mm to achieve flatness requirements and

RF input Wave guide WRD180 (double ridge)

**Interface Type**

*Ultra-Wideband MM Wave System and RF Modules DOI: http://dx.doi.org/10.5772/intechopen.97853*

RF output K connector DC supply D type Control D type

**Figure 4** presents the frontend block diagram used to calculate the module noise figure and gain. The LNA noise figure is 6 dB. The frontend calculated noise figure is 9.46 dB. The frontend gain is 21 dB. The computed frontend noise figure and gain for LNA noise figure of 5.5 dB is presented in **Figure 5**. The module computed noise

The frontend current and voltage consumption are given in **Table 3**. The frontend may operate in high gain state or in low gain state. The gain of the high gain channel is higher by 15 to 20 dB than the low gain channel. The frontend measured gain is presented in **Figure 6**. The measured gain is around 20 4 dB at

To achieve a high gain frontend module a medium power MMIC amplifier, HMC283, was added to the frontend module as presented in **Figure 7**. The HMC283 chip is a medium power amplifier. The chip consists of a four-stage GaAs amplifier

V.S.W.R better than 2:1.

**Table 2.**

**29**

**Figure 3.**

*MM-wave frontend block diagram.*

*Interface connectors.*

figure is 9.25 dB, with 21 dB gain.

the frequency range of 18 to 40 GHz.

**2.4 High gain wideband frontend module**

#### **Table 1.**

*Electrical specifications of a wideband, 18–40GHz, DF frontend.*

*Ultra-Wideband MM Wave System and RF Modules DOI: http://dx.doi.org/10.5772/intechopen.97853*

#### **Figure 3.**

**2.2 Compact MM-wave frontend requirements**

*Innovations in Ultra-WideBand Technologies*

**Physical characteristics - interface connectors**

**2.3 Wideband front-end design**

The amplifier is a two-stage amplifier.

connectors.

Module gain flatness

High gain state noise figure

Input power protection

Output spurious, non-harmonic

**Table 1.**

**28**

**Table 1** lists the frontend electrical specifications. The frontend design presented in this section meets the frontend electrical specifications. **Figure 3** presents the frontend block diagram, and **Table 2** lists the frontend interface

**Figure 3** shows a frontend block diagram. The frontend module consists of a limiter and a wideband 18–40 GHz low noise amplifier (LNA) LMA406. The solid state LMA406 is a low noise PHEMT amplifier that operates from 18 to 40 GHz.

The amplifier gain is around 12 dB with 4.5 dB noise figure and 14 dBm saturated output power, and 1 dB gain compression power output of +10 dBm. The LNA dimensions are 1.44 x 1.1 mm. A wideband PHEMT MMIC SPDT, AMMC-2008, was used. AMMC-2008 is a monolithic PHEMT SPDT switch with low insertion loss and high isolation from DC to 50 GHz. For improved reliability and moisture

**Parameter Requirements Performance** Frequency range 18–40 GHz Agree

(Lower than -40 dB for off state)

For any 0.5 GHz BW in 18–40 GHz 0.5 dB max. For any 4GHz BW in 18–40GHz 2 dB max. 3 dB max for the whole range 18–40 GHz

11 dB over temperature. 10 dB max for 40°C baseplate temperature.

40 dBm to 11 dBm not saturated

21 dBm single tone for third intercept point (Ip3) Second harmonic power 25 dBc max. For 10 dBm output.

> Input power 1 W CW at 0.1–40 GHz No damage at 1 W CW and 20 W Pulses Test for pulses: PW = 1 usec, PRF = 1KHz

> > "0" = 0–0.8 V; "1" = 2.0–3.3 V

terminated input

When it is not, correlative with the input signals 50 dBm max. Agree

Input power 60 dBm to 10 dBm Agree

S11 Better than 9 dB Agree

Voltages 5 V, +15 V Agree

Switching time Less than 0.1 usec Agree

Module volume 6 x 4 x 2 cm Agree

Video leakage Video leakage signals will be below the RF output level for

Agree

Agree

Agree

Agree

Agree

Agree

Agree

Agree

Module gain 24 3 dB, Switched by external control.

Output power 13 dBm saturated

Control signals LVTTL standard

*Electrical specifications of a wideband, 18–40GHz, DF frontend.*

Linearity 12 dBm min. Output at 1 dBc compression point

*MM-wave frontend block diagram.*


#### **Table 2.**

*Interface connectors.*

protection, the die is passivated at the active areas. One series and two shunt PHEMTs per throw provide 2.0 dB insertion loss and 28 dB isolation at 40 GHz. The isolation between the SPDT input port to the output ports is better than 25 dB. The SPDT 1 dBc compression point is around 14 dBm. The SPDT dimensions are 1 x 0.7 x 0.1 mm. The frontend electrical characteristics was evaluated using ADS Keysight software [15] and SYSCAL software. The MMIC amplifiers and the SPDT are connected to the surface of the mechanical box. The MMIC chips are assembled on a CoVar carrier. During development it was found that the spacing between the frontend carriers should be less than 0.03 mm to achieve flatness requirements and V.S.W.R better than 2:1.

**Figure 4** presents the frontend block diagram used to calculate the module noise figure and gain. The LNA noise figure is 6 dB. The frontend calculated noise figure is 9.46 dB. The frontend gain is 21 dB. The computed frontend noise figure and gain for LNA noise figure of 5.5 dB is presented in **Figure 5**. The module computed noise figure is 9.25 dB, with 21 dB gain.

The frontend current and voltage consumption are given in **Table 3**. The frontend may operate in high gain state or in low gain state. The gain of the high gain channel is higher by 15 to 20 dB than the low gain channel. The frontend measured gain is presented in **Figure 6**. The measured gain is around 20 4 dB at the frequency range of 18 to 40 GHz.

#### **2.4 High gain wideband frontend module**

To achieve a high gain frontend module a medium power MMIC amplifier, HMC283, was added to the frontend module as presented in **Figure 7**. The HMC283 chip is a medium power amplifier. The chip consists of a four-stage GaAs amplifier


#### **Figure 4.**

*Frontend module design for LNA NF = 6 dB.*

#### **Figure 5.**

*Frontend module design for LNA NF = 5.5 dB.*


gain and low gain channels with an amplifier in the low gain channel. The gain difference between the high gain and low gain channels for the frontend presented in **Figure 8** is around 10 to 15 dB. Block diagram of the wideband frontend with one

The high frontend electrical characteristics were evaluated using ADS Agilent software and SYSCAL software. The calculated noise figure and gain for LNA noise figure of 9.5 dB is presented in **Figure 10**. The frontend calculated noise figure is 13.3 dB. The frontend gain is 32.5 dB. The frontend module calculated noise figure and gain for LNA noise figure of 5 dB is presented in **Figure 11**. The frontend

**Table 4** lists the measured results of frontend modules. **Figure 12** is a photo of HMC283 amplifier assembly, and **Figure 13** is a photo of the wideband compact frontend. **Table 5** provides the performance and cost of commercial mm-wave

LMA406 amplifier in the high gain channel is shown in **Figure 9**.

calculated noise figure is 10 dB. The frontend gain is 29.5 dB.

**2.5 High gain frontend design**

*High gain frontend block diagram.*

**Figure 7.**

**31**

**Figure 6.**

*Measured wideband frontend gain 17 GHz to 40 GHz.*

*Ultra-Wideband MM Wave System and RF Modules DOI: http://dx.doi.org/10.5772/intechopen.97853*

#### **Table 3.**

*Wideband frontend module voltage and current consumption.*

MMIC in the frequency range of 17 to 40 GHz. The chip dimension is 1.62 mm x 1.62 mm and may be integrated into multi-chip modules. The chip is a GaAs PHEMT amplifier with around 20 dB gain and + 21 dBm output power. The amplifier bias voltage is +3.5 V and consumes 300 mA of current.

The amplifier gain is around 21 dB with 10 dB noise figure and 21 dBm saturated output power. The amplifier dimensions are 1.72 x 0.9 mm. The high gain frontend module block diagram is shown in **Figures 7** and **8**. The frontend module consists of high gain and low gain channels. **Figure 7** presents the high gain and low gain channels without an amplifier in the low gain channel. **Figure 8** presents the high
