**2. The locally active generic memristor**

Nanoscale memristors with locally active (i.e., S-shaped) DC current–voltage (I–V) characteristics have been utilized in the design of oscillatory neuron cells [30, 31]. Furthermore, it was shown in [32–34] that memristor models in a generic form are capable of representing the dynamics of these nanoscale devices accurately. Similarly, in this work, we adopt a simplified generic memristor model to implement locally active dynamics, which helps to reduce the complexity and the simulation time of large-scale networks employing such devices. In addition, the adoption of the generic form enables simplified calculations related to the derivation of the AC model of the device, further promoting the clarification of the results.
