**5. Conclusions**

In summary, this chapter discusses the resistive switching based composite memory cells and offers a solution toward the limitations within the current stateof-art 0T1R fully passive arrays and 1T1R active arrays to implement more efficient compute-in-memory structure for future beyond von-Neumann computing architectures. The first section of this chapter briefly review different resistive switching based composite memory arrays and discusses their advantages and limitations toward compute-in-memory applications and implementations. The next section, define a 2M1M memory array cell and analyzes its switching characteristics and the write and read operation principles within the crossbar structure. The final section of the chapter discusses the logic application with 2M1M switch and its capability to implement AND, NAND, OR, and NOR logic gates within 2M1M memory array structure and its compute-in-memory feature. Also, this section discusses the problem of sneakpath within the composite memory arrays and 2M1M array structure. We hope this chapter provide a good basis toward development of resistive switching based composite memory array platforms and providing a good insight over 2M1M structural benefits for compute-in-memory applications.

*Development of Compute-in-Memory Memristive Crossbar Architecture with… DOI: http://dx.doi.org/10.5772/intechopen.99634*
