**9. Conclusions**

This chapter dealt with different types of resistive switching where the role of interface formation modifying the switching properties was thoroughly discussed. The surface properties of thin films demonstrated significant dependence onto the predominant factors e.g. redox reactions, interface formation along with tunnel barrier thereby affected the device performance. The morphological characteristics of surface across the interface containing GBs and GSs regulated the charge carrier transport due to modified band structure. Owing to relatively high defect concentration at the interface, GBs controlled the leakage current behavior of device.
