Meet the editor

Dr. Yao-Feng Chang is a memory engineer at Intel. He received a BS from National Sun Yat-sen University, Taiwan, in 2007; an MS in Electronics Engineering from National Chiao Tung University, Taiwan, in 2009; and a Ph.D. in Electrical Engineering from the University of Texas at Austin, USA, in 2015. He has more than 100 journal publications to his credit. His research interests include SiOx- and SiNx- Based ReRAM fabrication,

characterization, and mechanism; stateful Boolean logic and synaptic post-Moore's computing and bio-inspiration biomimetic systems in electronic devices; and selector integration for large-scale, low-power array design.

Contents

**Section 1**

**Section 2**

Multiplication

*and Ronald Tetzlaff*

*and Majid Ahmadi*

with Composite Memory Cells

**Preface XI**

Memristor - Device and Characterizations **1**

**Chapter 1 3**

**Chapter 2 25**

**Chapter 3 45**

Memristor - Advance Applications **67**

**Chapter 4 69**

**Chapter 5 87**

**Chapter 6 105**

Development of Compute-in-Memory Memristive Crossbar Architecture

Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-

Mitigating State-Drift in Memristor Crossbar Arrays for Vector Matrix

*by Amirali Amirsoleimani,Tony Liu, Fabien Alibart, Serge Eccofey,* 

Pattern Formation in a RD-MCNN with Locally Active Memristors

Memristors Based on 2D Monolayer Materials

*by Mangal Das and Sandeep Kumar*

Structured Memristive Thin Films

Effect of Surface Variations on Resistive Switching

*by Chang Liu, Lin Zhu, Lai-Guo Wang and Ai-Dong Li*

*Yao-Feng Chang, Dominique Drouin and Roman Genov*

*by Ahmet Samil Demirkol, Alon Ascoli, Ioannis Messaris* 

*by Mehri Teimoory, Amirali Amirsoleimani, Arash Ahmadi* 

*by Xiaohan Wu, Ruijing Ge, Deji Akinwande and Jack C. Lee*
