**3.3 Approaches to improve device performance of group III-Nitride semiconductors-based PDs**

Researchers across the world have employed various approaches to improve the performance of the III-Nitrides-based devices. These include improvement in growth quality by the employment of different growth techniques, adopting novel growth methods like epitaxial lateral overgrowth (ELO), using different materials as buffer layers such as AlN, and by fabricating improved structures to reduce defects. Another way to improve the growth quality of III-Nitrides is to find the alternatives to conventional silicon and sapphire substrates. In this regard, transition metal dichalcogenides, having a small lattice mismatch with III-Nitrides, can be used as potential substrates. Engineering the device structures can also result into the improvement of the device performance, and this can be achieved by making quantum confinement architectures, and by making hybrid structures using 2D materials like graphene and MoS2.
