**6. Outlook**

Based upon the analysis of the reported devices in this field, a perspective regarding the future of III-Nitrides-based devices and the related follow-up work have been summarized below:


• Till now, scientists across the world have generally exploited heterojunctions of III-Nitrides with 2D materials in the form of thin films. Heterojunctions based upon the one-dimensional (1D) nanostructures can provide new ways for the development of high-performance optoelectronic devices. The nanorods-based heterointerfaces of the III-Nitrides with 2D materials (growth along these nanorods or a core-shell structure) would enable a much higher aspect ratio and therefore, a much larger area for light absorption as well as a larger active interface, therefore, an enhancement in the optoelectronic performance.

Overall, the excellent properties of the III-Nitride semiconductors make them promising candidates for the applications in photodetection, and these PDs have exhibited outstanding device performance that competes with those available commercially. Thus, III-Nitrides and their heterojunctions-based PDs can be used for the development of futuristic self-biased and ultrafast PDs.
