**Author details**

Deependra Kumar Singh1 , Basanta Kumar Roul1,2, Karuna Kar Nanda1 and Saluru Baba Krupanidhi1 \*

1 Materials Research Centre, Indian Institute of Science, Bangalore, India

2 Central Research Laboratory, Bharat Electronics, Bangalore, India

\*Address all correspondence to: sbkrupanidhi@gmail.com

© 2021 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

**169**

1978;33(7):629.

*Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors*

[8] Refaat TF, Abedin MN, Bhagwat V, Bhat IB, Dutta PS, Singh UN. InGaSb photodetectors using an InGaSb

substrate for 2μm applications. Applied Physics Letters. 2004;85(11):1874.

[9] Murtaza SS, Campbell JC, Bean JC, Peticolas LJ. Asymmetric dual GeSi/ Si Bragg mirror and photodetector operating at 632 and 780 nm. Applied Physics Letters. 1994;65(7):795.

[10] Arora K, Goel N, Kumar M, Kumar M. Ultrahigh performance of self-powered β-Ga2O3 thin film solar-blind photodetector grown on cost-effective Si substrate using hightemperature seed layer. ACS Photonics.

[11] Yao JD, Zheng ZQ, Yang GW. Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition. Progress in Materials Science. 2019;106:100573.

[12] Moustakas TD, Iliopoulos E,

Doppalapudi D, Misra M, et al. Growth and device applications of III-nitrides by MBE. Journal of Crystal Growth.

[13] Roul B, Pant R, Chowdhury AM, Chandan G, Singh DK, Chirakkara S, et al. Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared- and Visible-Blind Ultraviolet Photodetectors

With High Rejection Ratio. IEEE Transactions on Electron Devices.

[14] Mohd Yusoff MZ, Baharin A, Hassan Z, Abu Hassan H, Abdullah MJ. MBE growth of GaN pn-junction photodetector on AlN/Si(111)

[15] Chowdhury AM, Chandan G, Pant R, Roul B, Singh DK, Nanda KK,

substrate with Ni/Ag as ohmic contact. Superlattices and Microstructures.

2018;5(6):2391-401.

Sampath AV, Ng HM,

2001;227-228:13-20.

2019;66(3):1345-52.

2013;56:35-44.

*DOI: http://dx.doi.org/10.5772/intechopen.95389*

[1] Wu W, Zhang Q, Zhou X, Li L, Su J, Wang F, et al. Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures.

Nano Energy. 2018;**51**:45-53

2010;94(12):2386-94.

[3] Khan MA, Nanda KK,

Materials. 2020;2(4):944-53.

Torres Alonso E, Jones GF, Fadhil Ramadhan S, Craciun MF, et al. Fast and Highly Sensitive Ionic-Polymer-Gated WS2-Graphene Photodetectors. Advanced Material. 2017;29:1700222.

[6] Sai Manohar GV, Krupanidhi SB, Nanda KK. Giant enhancement in photoresponse via engineering of photo-induced charge (electron and hole) transfer in linear and non-linear devices. Sensors and Actuators A: Physical. 2020;304:111842.

[7] Ilegems M, Schwartz B, Koszi LA, Miller RC. Integrated multijunction GaAs photodetector with high output voltage. Applied Physics Letters.

[5] Mehew JD, Unal S,

Krupanidhi SB. Mechanistic view on efficient photodetection by

solvothermally reduced graphene oxide. Journal of Material Science: Material in Electronics. 2017;28(19):14818-26.

[4] Singh DK, Pant R, Chowdhury AM, Roul B, Nanda KK, Krupanidhi SB. Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector. ACS Applied Electronic

[2] Singh RK, Kumar J, Kumar A, Kumar V, Kant R, Singh R. Poly(3 hexylthiophene): Functionalized single-walled carbon nanotubes: (6,6)-phenyl-C61-butyric acid methyl ester composites for photovoltaic cell at ambient condition. Solar Energy Materials and Solar Cells.

**References**

*Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors DOI: http://dx.doi.org/10.5772/intechopen.95389*
