**Author details**

Mickael Martin<sup>1</sup> , Thierry Baron<sup>1</sup> \*, Yann Bogumulowicz<sup>2</sup> , Huiwen Deng3 , Keshuang Li<sup>3</sup> , Mingchu Tang<sup>3</sup> and Huiyun Liu<sup>3</sup>

1 University Grenoble Alpes, CNRS, CEA-LETI Minatec, Grenoble INP, LTM, Grenoble, France

2 University Grenoble Alpes, CEA-LETI, Grenoble, France

3 Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, United Kingdom

\*Address all correspondence to: thierry.baron@cea.fr

© 2020 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/ by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

*GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications DOI: http://dx.doi.org/10.5772/intechopen.94609*
