**9. Conclusion**

Gallium Arsenide is deemed as an eminent member of the III-V semiconductor group. It has presented itself as a notable material for electronic devices and vastly being used in optoelectronic and microelectronic devices. The precept knowledge of the electrons and the energies related to GaAs is required in order to calculate physical properties. Furthermore, calculation of lattice constants and other bulk ground state properties is considered to be paramount in physics associated with condensed matter.

In this chapter we have reported the basic principle for the GaAs material as well as the physical, optical, and chemical properties. Also, we have reported the crystal growth of the GaAs with another semiconductor material such as In and Al.
