**Dr. Abdullah Mohamed Asiri, Dr. Anish Khan and Dr. Inamuddin**

King Abdulaziz University, Kingdom of Saudi Arabia

## **Thamer Tabbakh**

Assistant Professor, King Abdulaziz City for Science and Technology, Saudi Arabia

**IV**

mean contact pressure.

varying degrees, affect its state and through it, the action spreads further to the property and the boundary medium Thus, this causes either a de-structuring effect or a change in the state of chemical bonds of chlorate ions in concentrated solutions. Thus, the chlorate ion, being structure-forming and exhibiting a proto-acceptor ability, in solutions of group III perchlorates forms exclusively solvate-separated ion pairs due to the high enthalpy of hydration of the corresponding metal cations.

In Chapter 4, Associate Prof. Benabderrahmane investigates the effect of indium oxide on the properties of indium particles, which are used as silicon nanowire catalysts. The author examines the elaboration of indium particles by different annealing processes such as rapid thermal annealing as well as conventional processes. The elaborated particles are dedicated for use as catalysts for growing silicon nanowires growth via the vapor–liquid–solid process. After conventional annealing, the indium layer is broken up into elongated and inhomogeneous islands of micrometric sizes. The annealing conditions influence the catalyst morphology

In Chapter 5, Prof. Tabbakh et al. report on the elastic, optical, structural, and transport properties of gallium arsenide (GaAs). These excellent properties have led to the production of new and unique devices like high-efficiency light emitters, light sensors, and high-speed switching devices. GaAs is considered an outstanding member of the III–V semiconductor family. It has many exceptional features,

In Chapter 6, Mr. Rouf et al. carry out a comparative analysis of the nanoindentation technique. Nano-indentation is a dynamic perceptible method for attaining mechanical properties from limited content. In delicately regulated tests in which the acceptance of the elastic contact analysis is met, the accuracy of a few percentage points is smoothly obtainable for indentations as micro as 10 nm. Specialists must be constantly aware of the holdings of variations from these suppositions on nano-indentation results. An exact evaluation for load, displacement, and machine concurrence is required, as is an effective rational sketch of the shape of the tip and a configuration devised to reduce the consequences of thermal drift and plasticity. Nanoindentation uses an indirect method of determining the contact area, as the depth of penetration is measured in nanometers, while in conventional indentation the area in contact is measured by elementary measurement of the residual area after the indenter is removed from the specimen. Dynamic hardness is the best result of dynamic indentation, which can be expressed as the ratio of energy consumed during a rapid indentation to the volume of indentation. The parameters taken into consideration are indentation depth, contact force, contact area, and

In Chapter 7, Prof. Yamaguchi describes a solar cell developed with GaAs material. The author reviews the progress in III–V compound single-junction solar cells such as Gallium Arsenide (GaAs), Indium Phosphide (InP), Aluminium gallium arsenide (AlGaAs), and Indium Gallium phosphide (InGaP) cells. Results show that GaAs solar cells have 29.1% under the sun, which is the highest ever reported for single-junction solar cells. In addition, the author presents analytical results for non-radiative recombination and resistance losses in III–V compound solar cells by considering fundamentals for major losses in III–V compound materials and solar cells. Because the limiting efficiency of single-junction solar cells is 30%–32%, multi-junction solar cells have been developed. GaP/GaAs–based 3-junction solar cells are widely used in this space. Additionally, the III–V compound solar cells have

especially for use in opto-electronic and micro-electronic devices.

and, consequently, grow silicon nanowires.
