**4. Experimental details**

**Figure 2** describes the silicon nanowires growth process [27]. Indium particles (In-Nps) were grown ex situ by annealing indium-coated silicon p-type (100) substrates. Indium layers of 100 nm thickness were deposited on silicon substrates by thermal evaporation. The used annealing procedures are: (1) conventional annealing with a vacuum pressure of 10−2 mbar at 600°C during 45 min, (2) RTA annealing using a home-built RTA furnace with a vacuum pressure of 10−6 mbar at different temperatures (300, 350, 400, and 450°C) during 5 min.

To synthesize SiNWs, the samples are introduced to the PECVD reactor with substrate temperature set to 400°C. Prior to precursor (SiH4) introduction, the samples are treated by hydrogen plasma during 10 min with a flow rate of 60 sccm. Then, SiH4 is introduced during 15 min with a flow rate of 10 sccm.

*Investigation of Indium Oxide Effect on Indium Particles Properties Used as Silicon Nanowires… DOI: http://dx.doi.org/10.5772/intechopen.93648*

**Figure 2.** *SiNWs' growth process adopted in this work.*
