**7. Conclusions**

In this work, indium is used as catalyst for silicon nanowires' growth by VLS mode using PECVD. Indium is considered as a promising metal to replace gold as it forms a low-eutectic alloy with silicon and it introduces shallow defects.

Indium catalyst is elaborated by annealing indium-coated silicon substrates using two different annealing processes: conventional and RTA annealing. The annealing conditions influence the catalyst morphology and as a consequence the grown SiNWs. In this work, we have shown that the indium oxide presence is affecting the growth, in particular the density.
