**Conflict of interest**

There are no conflicts of interest to declare.

*The New Etching Technologies of Graphene Surfaces DOI: http://dx.doi.org/10.5772/intechopen.92627*

*21st Century Surface Science - a Handbook*

**4. Conclusions**

**Table 1.**

responsivity (~10<sup>6</sup>

**Conflict of interest**

Generally, there are many unexploited huge potentials from the etchedgraphene products, but the perspectives are bright. If these etching technologies are extended to other nanomaterials such as transition metal dichalcogenides (TMDs) or transition metal carbides, nitrides, and carbonitrides (MXenes), and black phosphorous [42], it will definitely achieve high-quality electronics and optoelectronics. Bandgap tuning for nanomaterials will significantly improve the on/off current ratio, photoresponsivity, quantum efficiency, conductivity and others. Layer-by-layer etching for multilayer materials by low-energy plasma technology (double mesh grids inserted for plasma apparatus such as chlorineradical ICP, neutral-beam ICP and ion beam ICP) with no physical damage would be the next research direction and can be applied to the other low-dimensional materials [28, 43] to achieve ultrahigh performance of electronic and optoelectronic devices [28, 43]. For instance, in the latest report in 2019, Kim et al. utilized a chlorine ICP innovative plasma apparatus that has no physical damage effect by inserting double mesh grids for cyclic ALE process on intrinsic multilayer MoS2 and successfully fabricated heterostructured photodetector with ultra-

*Graphene etching methods and their applications. Source: "NA" is "not applicable".*

A/W) in the visible range [43].

There are no conflicts of interest to declare.

**68**
