Chapters by Prof. Kair Nussupov

• Book Chapter Ion Synthesis of SiC and Its Instability at High Temperatures
  by Kair Kh. Nussupov and Nurzhan B. Beisenkhanov in the book "Physics and Technology of Silicon Carbide Devices" edited by Yasuto Hijikata, ISBN 978-953-51-0917-4, InTech, October 10, 2012
• Book Chapter The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si
  by Kair Kh. Nussupov and Nurzhan B. Beisenkhanov in the book "Silicon Carbide - Materials, Processing and Applications in Electronic Devices" edited by Moumita Mukherjee, ISBN 978-953-307-968-4, InTech, October 10, 2011